A 19W high-efficiency wide-band CMOS-GaN class-E Chireix RF outphasing power amplifier

Summary form only given, as follows. This paper presents a class-E Chireix outphasing power amplifier, comprising two CMOS-GaN lineups that are combined with a novel asymmetric coupled-line balun. The proposed concept demonstrates 51.6% system average power efficiency and 65.1% average drain efficiency for a 7.5dB PAR WCDMA signal at 1.95GHz, while meeting the ACLR specifications. Moreover, the PA demonstrated more than 60% drain efficiency across a 6dB power back-off range and up to 19W peak power between 1800–2050MHz.