• DocumentCode
    2597983
  • Title

    GaN HEMTs with pre-match for Ka-band with 18W

  • Author

    Takagi, Kazuyoshi ; Shinichiro, N. ; Masuda, Kohji ; Matsushita, Kazuki ; Sakurai, Haruaki ; Onodera, K. ; Shim, Jong-In ; Kawasaki, Hiroshi ; Soejima, T. ; Takada, Yasuhiro ; Hirose, Masanobu ; Tsuda, Kazuhiko

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. AlGaN/GaN High Electron Mobility Transistors (HEMTs) with pre-match circuit were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the AlGaN barrier layer and the gate length. The chip had a pre-match circuit to achieve an impedance matching at 31GHz. It had a 6.4 mm gate periphery on a metal carrier plate. The output power achieved 18.5 W with impedance matching circuits.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973511
  • Filename
    5973511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597983