Title :
GaN HEMTs with pre-match for Ka-band with 18W
Author :
Takagi, Kazuyoshi ; Shinichiro, N. ; Masuda, Kohji ; Matsushita, Kazuki ; Sakurai, Haruaki ; Onodera, K. ; Shim, Jong-In ; Kawasaki, Hiroshi ; Soejima, T. ; Takada, Yasuhiro ; Hirose, Masanobu ; Tsuda, Kazuhiko
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Abstract :
Summary form only given, as follows. AlGaN/GaN High Electron Mobility Transistors (HEMTs) with pre-match circuit were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the AlGaN barrier layer and the gate length. The chip had a pre-match circuit to achieve an impedance matching at 31GHz. It had a 6.4 mm gate periphery on a metal carrier plate. The output power achieved 18.5 W with impedance matching circuits.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973511
