Title :
12 × 7.14 GS/s rate time-resolved BiCMOS imager
Author :
Zlatanski, Martin ; Uhring, Wilfried ; Le Normand, Jean-Pierre ; Zint, Chantal-Virginie ; Mathiot, Daniel
Author_Institution :
Inst. d´´Electron. du Solide et des Syst. (InESS), CNRS, Strasbourg, France
Abstract :
In this work, a time-resolved imager with adjustable single row sampling rate from 1 GS/s to 7.14 GS/s fabricated in standard 0.35 μm SiGe BiCMOS technology is presented. The prototype consists of a vector of 12 photodetectors, a Transimpedance Amplifier (TIA) stage, a 128-deep analog sampling and storage block and a Voltage-Controlled Delay Line (VCDL) for sampling clock generation. The imager demonstrated a 6.7 ns Full Width at Half Maximum (FWHM) 532 nm laser pulse capture with very good accuracy and a 500 MHz 650 nm optical periodical wave acquisition at 7.14 GS/s.
Keywords :
BiCMOS integrated circuits; operational amplifiers; BiCMOS technology; adjustable single row sampling rate; laser pulse capture; optical periodical wave acquisition; photodetectors; storage block; time-resolved BiCMOS imager; transimpedance amplifier; voltage-controlled delay line; CMOS integrated circuits; Optical imaging; Optical pulses; Photodiodes; Phototransistors; Silicon germanium;
Conference_Titel :
NEWCAS Conference (NEWCAS), 2010 8th IEEE International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-6806-5
Electronic_ISBN :
978-1-4244-6804-1
DOI :
10.1109/NEWCAS.2010.5603707
