Title :
Silicon Transistor Failure Mechanisms Caused by Surface Charge Separations
Author_Institution :
Motorola, Inc., Semiconductor Products Div., Phoenix, Arizona
Keywords :
Failure analysis; Leakage current; Life testing; Noise level; Optical wavelength conversion; P-n junctions; Silicon; Stability; Stress; Temperature;
Conference_Titel :
Physics of Failure in Electronics, 1963. Second Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1963.362244
