Title :
Large-signal scattering parameter measurements for RF power transistors
Author :
Call, John B. ; Davis, William A.
Author_Institution :
Wireless Infrastruct. Syst. Div., Metorola Inc., USA
Abstract :
Large-signal nonlinear two-port device measurements are described using a calibrated, vector-measurement system. The unique measurement system architecture allows meaningful measurement of high-power RF transistors biased in nonlinear modes of operation such as class B. Measurement results are discussed along with their relevance to the RF power amplifier design process
Keywords :
S-parameters; UHF measurement; UHF transistors; power transistors; semiconductor device measurement; RF power amplifier design; RF power transistors; RTL measurement system; calibrated vector-measurement system; class B operation; high-power transistors; large-signal S-parameter measurements; nonlinear operation modes; nonlinear two-port device measurements; scattering parameter measurements; Calibration; Error correction; Fixtures; Power amplifiers; Power measurement; Power system modeling; Power transistors; Radio frequency; Radiofrequency amplifiers; Scattering parameters;
Conference_Titel :
Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-6267-5
DOI :
10.1109/RAWCON.2000.881875
