DocumentCode :
2598096
Title :
RF frequency properties of a reverse biased thick switching PIN-diode
Author :
Drozdovskaia, Lioudmila
Author_Institution :
ECE Dept., Villanova Univ., PA, USA
fYear :
2000
fDate :
2000
Firstpage :
147
Lastpage :
150
Abstract :
Some important frequency properties of the reverse biased thick silicon PIN-diode has been studied using computer simulation based on different mathematical and physical models. There is a comparison between theoretical and experimental results
Keywords :
UHF diodes; microwave diodes; p-i-n diodes; power semiconductor diodes; semiconductor device models; RF frequency properties; Si; computer simulation; frequency properties; mathematical models; microwave high-power mode; physical models; reverse biased thick switching PIN-diode; Computer simulation; Harmonic distortion; Impedance; Mathematical model; Microwave devices; Radio frequency; Semiconductor diodes; Silicon; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-6267-5
Type :
conf
DOI :
10.1109/RAWCON.2000.881876
Filename :
881876
Link To Document :
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