DocumentCode
2598110
Title
High power effects in gallium nitride-based microwave and RF control devices
Author
Caverly, Robert H. ; Drozdovski, Nikolai ; Quinn, Michael
Author_Institution
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
fYear
2000
fDate
2000
Firstpage
151
Lastpage
154
Abstract
Gallium nitride-based HEMTs have been studied in a microwave and RF control application under high power levels. A theoretical model is presented showing an increase in the microwave resistance occurs at power levels greater than +20 dBm due to operation near the current saturation region. This phenomenon is primarily due to the field-dependent mobility in the two dimensional electron gas and is verified with on-wafer experimental data
Keywords
III-V semiconductors; carrier mobility; gallium compounds; microwave field effect transistors; power HEMT; semiconductor device models; two-dimensional electron gas; GaN; HEMTs; III-V semiconductors; RF control devices; current saturation region; field-dependent mobility; high power effects; microwave control devices; microwave resistance; on-wafer experimental data; theoretical model; two dimensional electron gas; Gallium compounds; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Microwave circuits; Microwave devices; Radio frequency; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE
Conference_Location
Denver, CO
Print_ISBN
0-7803-6267-5
Type
conf
DOI
10.1109/RAWCON.2000.881877
Filename
881877
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