DocumentCode
2598125
Title
Thermal conductivity measurements of thin-film silicon dioxide
Author
Schafft, Harry A. ; Suehle, John S. ; Mirel, Paul G A
Author_Institution
Nat. Int. of Stand. & Technol., Gaithersburg, MD, USA
fYear
1989
fDate
13-14 March 1989
Firstpage
121
Lastpage
125
Abstract
Measurements of the thermal conductivity of micrometer-thick films of silicon dioxide are reported for the first time. Results show that the thermal conductivity is much lower than the values reported for bulk specimens, decreases with increasing temperature, and decreases with decreasing film thickness. This means that heating effects may be much larger than expected in accelerated stress tests and in other cases where joule heating can be a concern.
Keywords
insulating thin films; semiconductor technology; silicon compounds; thermal conductivity of solids; SiO2 thin films; accelerated stress tests; film thickness; heating effects; joule heating; micrometer-thick films; thermal conductivity; Conductive films; Conductivity measurement; Heating; Life estimation; Semiconductor films; Semiconductor thin films; Silicon compounds; Temperature; Thermal conductivity; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN
0-87942-714-0
Type
conf
DOI
10.1109/ICMTS.1989.39295
Filename
39295
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