• DocumentCode
    2598125
  • Title

    Thermal conductivity measurements of thin-film silicon dioxide

  • Author

    Schafft, Harry A. ; Suehle, John S. ; Mirel, Paul G A

  • Author_Institution
    Nat. Int. of Stand. & Technol., Gaithersburg, MD, USA
  • fYear
    1989
  • fDate
    13-14 March 1989
  • Firstpage
    121
  • Lastpage
    125
  • Abstract
    Measurements of the thermal conductivity of micrometer-thick films of silicon dioxide are reported for the first time. Results show that the thermal conductivity is much lower than the values reported for bulk specimens, decreases with increasing temperature, and decreases with decreasing film thickness. This means that heating effects may be much larger than expected in accelerated stress tests and in other cases where joule heating can be a concern.
  • Keywords
    insulating thin films; semiconductor technology; silicon compounds; thermal conductivity of solids; SiO2 thin films; accelerated stress tests; film thickness; heating effects; joule heating; micrometer-thick films; thermal conductivity; Conductive films; Conductivity measurement; Heating; Life estimation; Semiconductor films; Semiconductor thin films; Silicon compounds; Temperature; Thermal conductivity; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
  • Print_ISBN
    0-87942-714-0
  • Type

    conf

  • DOI
    10.1109/ICMTS.1989.39295
  • Filename
    39295