A new pinched-off cold-FET method to extract parasitic capacitances of MESFETs and HEMTs

Author

Lai, Yeong-Lin ; Hsu, Kuo-Hua

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2000

fDate

2000

Firstpage

159

Lastpage

162

Abstract

The extrinsic gate and drain capacitances, C_pg and C _pd, are extracted based on a physically meaningful depletion-layer model and a linear regression technique. The extraction method can be applied to obtain the small-signal equivalent circuit parameters for the MESFETs and HEMTs. The simulated S parameters based on the new analytical method exhibit great agreement with the measured S parameters from 0.5 to 20 GHz

Keywords

S-parameters; Schottky gate field effect transistors; capacitance; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; statistical analysis; 0.5 to 20 GHz; HEMTs; MESFETs; extraction method; extrinsic drain capacitances; extrinsic gate capacitances; linear regression technique; measured S parameters; parasitic capacitances; physically meaningful depletion-layer model; pinched-off cold-FET method; simulated S parameters; small-signal equivalent circuit parameters; Capacitors; Equivalent circuits; FETs; Geometry; HEMTs; Inductance; MESFET circuits; Parasitic capacitance; Scattering parameters; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-6267-5

Type

conf

DOI

10.1109/RAWCON.2000.881879

Filename

881879