Title :
A new wafer surface charge monitor (CHARM)
Author :
McCarthy, Anthony M. ; Lukaszek, Wes
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
Abstract :
An electrical test structure for monitoring surface charge deposited on wafers during process steps is described. The device is a variation of an EEPROM cell with enhanced charge collection due to a large-area control gate. Proof of concept has been demonstrated in ion-implantation and plasma-etching processes.
Keywords :
EPROM; charge measurement; integrated circuit testing; ion implantation; monitoring; sputter etching; CHARM; EEPROM cell; electrical test structure; enhanced charge collection; ion-implantation; large-area control gate; plasma-etching; process steps; wafer surface charge monitor; Circuits; EPROM; Ion implantation; Laboratories; MOSFETs; Monitoring; Optical sensors; PROM; Protection; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
DOI :
10.1109/ICMTS.1989.39301
