Title :
Design and implementation of channel mobility measurement modules
Author :
Ouwerling, G.J.L. ; Staalenburg, J.C.
Author_Institution :
Fac. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
Low-field majority carrier channel mobility profiles are determined by combining C-V and channel conductance measurements. The measurements can be used to determine majority carrier channel mobility profiles. The C-V data can also be used for the determination of doping profiles. The theory, the design of the test structures, and the measurement techniques are discussed. Experimental results are presented for a bipolar and a BiMOS process. In the BiMOS process, a deviation from existing mobility models was found.
Keywords :
BIMOS integrated circuits; bipolar integrated circuits; capacitance measurement; carrier mobility; doping profiles; electric admittance measurement; integrated circuit testing; modules; BiMOS process; C-V characteristics; bipolar process; channel conductance; channel mobility measurement modules; doping profiles; majority carrier channel mobility profiles; test structures; Bipolar transistors; Capacitance; Electrical resistance measurement; Fabrication; Laboratories; Lattices; Measurement techniques; Shape measurement; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
DOI :
10.1109/ICMTS.1989.39303
