A RF MOSFET SPICE model with a new substrate network

Author

Lee, Seongheam ; Kim, Cheon Soo ; Yu, Hyun Kyu

Author_Institution

Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea

fYear

2000

fDate

2000

Firstpage

203

Lastpage

206

Abstract

A modified BSIM3v3 RF model including a new substrate network with divided junction capacitances is proposed to account for the substrate effect. The superiority of the model over several conventional models is demonstrated by observing good agreements between measured and modeled S-parameters up to 10 GHz. In order to verify the accuracy of modeling the output dispersion effect, modeled data of the effective drain-source resistance and capacitance for the new substrate network are compared with those for previously reported networks

Keywords

MOSFET; S-parameters; SPICE; UHF field effect transistors; capacitance; equivalent circuits; microwave field effect transistors; semiconductor device models; substrates; RF MOSFET SPICE model; S-parameters; divided junction capacitances; drain-source capacitance; drain-source resistance; modified BSIM3v3 RF model; output dispersion effect; substrate network; Capacitance; Dispersion; Electrical resistance measurement; Integrated circuit modeling; MOSFET circuits; Predictive models; Radio frequency; SPICE; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2000. RAWCON 2000. 2000 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-6267-5

Type

conf

DOI

10.1109/RAWCON.2000.881890

Filename

881890