• DocumentCode
    2598446
  • Title

    Important Mechanism Contributing to Tunnel Diode Failure

  • Author

    Nanavati, R.P.

  • Author_Institution
    Syracuse University, Syracuse, New York
  • fYear
    1963
  • fDate
    Sept. 1963
  • Firstpage
    550
  • Lastpage
    559
  • Keywords
    Gallium arsenide; Nitrogen; Photonic crystals; Radiation detectors; Semiconductor diodes; Silicon radiation detectors; Temperature; Testing; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Failure in Electronics, 1963. Second Annual Symposium on the
  • Conference_Location
    Chicago, IL, USA
  • ISSN
    0097-2088
  • Type

    conf

  • DOI
    10.1109/IRPS.1963.362267
  • Filename
    4207618