Polarization bistability of vertical cavity lasers under external optical injection

Author

Yu, S.F.

Author_Institution

Dept. of Electr. & Eng., Hong Kong Univ., Hong Kong

Volume

2

fYear

1996

fDate

18-21 Nov 1996

Firstpage

345

Abstract

The polarization bistability of VCLs is studied theoretically with the consideration of dielectric Bragg reflectors, surface coatings, carrier induced refractive index inside the active layer as well as the intensity and wavelength of the injected light. The VCL has a built-in index guided structure and a GaAs-Al_0.3Ga_0.7As quantum well active layer. A rate-equation model is developed. It is shown that all-optical switching and memory operation can be achieved in VCLs by external optical injection, however, devices with suitable design of surface coating and Bragg reflectors are required

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser theory; light polarisation; optical bistability; optical switches; quantum well lasers; GaAs-Al_0.3Ga_0.7As; GaAs-Al_0.3Ga_0.7As quantum well active layer; active layer; all-optical switching; built-in index guided structure; carrier induced refractive index; dielectric Bragg reflectors; external optical injection; injected light; intensity; memory operation; polarization bistability; rate-equation model; surface coatings; vertical cavity lasers; wavelength; Coatings; Dielectrics; Laser theory; Optical bistability; Optical devices; Optical polarization; Optical surface waves; Refractive index; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571907

Filename

571907