Title :
Drain and bulk symmetry factor: a statistical tool to improve device reliability
Author :
Dars, P. ; D´Ouville, T. Ternisien ; Merckel, G. ; Mingam, H.
Author_Institution :
CNET-CNS, Meylan, France
Abstract :
The drain and bulk symmetry factor is proposed to evaluate device sensitivity to asymmetrical characteristics resulting from process parameters. With the use of a simple test structure and a few specific measurements, it allows comparison of the effects of different processes and provides a good predictive tool in terms of aging behavior. It also shows that it is necessary to do a statistical analysis to compare the influences of various processes.
Keywords :
ageing; insulated gate field effect transistors; reliability; semiconductor device testing; statistical analysis; NMOS transistors; aging behavior; asymmetrical characteristics; bulk symmetry factor; device reliability; drain symmetry factor; statistical analysis; statistical tool; test structure; Automatic testing; Current measurement; Electrostatic measurements; Microelectronics; Performance evaluation; Semiconductor device measurement; Shadow mapping; Statistical analysis; Stress; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on
Print_ISBN :
0-87942-714-0
DOI :
10.1109/ICMTS.1989.39320
