Optimizing of the material structure in AlGaN/GaN HEMTs through the energy band engineering approach

Author

Zhao, Miao ; Liu, Xinyu ; Zheng, Yingkui ; Ke, Wei

Author_Institution

Microwave Devices & Integrated Circuits Dept., Inst. of Microelectron., Beijing, China

fYear

2012

fDate

19-20 April 2012

Firstpage

1

Lastpage

3

Abstract

The performance of 2DEG in AlGaN/GaN HEMTs was investigated using the self-consistent solution of Poisson and Schrödinger equations, which in the simulation, the effects of the spontaneous and piezoelectric polarization were included. An optimized structure with cap layer yielded an increase in effective barrier height, with little penalty in sheet carrier concentration. The structure due to AlN interlayer was investigated by using the energy band calculation.

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; band structure; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 2DEG; AlGaN-GaN; AlN; HEMT; Poisson equation; Schrödinger equation; barrier height; energy band calculation; energy band engineering approach; material structure optimization; piezoelectric polarization; self-consistent solution; sheet carrier concentration; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Materials; Performance evaluation; Schottky barriers; AlGaN/GaN HEMTs; band energy; self-consistent simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-1893-8

Type

conf

DOI

10.1109/MMWCST.2012.6238138

Filename

6238138