Tunable impedance matching networks for agile RF power amplifiers

Summary form only given, as follows. The efficiency is one of the most critical parameters in the design of RF power amplifiers. For linear power amplifiers the efficiency drops dramatically in the back-off region. An adaptive impedance matching network at the output of the transistor is presented and analyzed in this paper. The topology of the matching network enables a direct connection to the transistor. The matching network has been designed using the minimum mean square error method and realized on a BST thick film substrate.