DocumentCode :
2598733
Title :
Combined power oscillator using GaN HEMT
Author :
Kim, Sungho ; Kim, Heonhwan ; Shin, Seung Heon ; Kim, Jung-Ho ; Kim, Bumki ; Choi, Jang-Young
Author_Institution :
Kwangwoon University, Seoul, Republic of Korea
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given, as follows. This paper proposes a new configuration for power oscillators based on the combined power amplifier. The focus is on power combining as a oscillator structure with a positive feedback loop line. The measured output power and conversion efficiency of the proposed oscillator are 46.8 dBm and 58 %, respectively, at 2.45 GHz with an applied drain bias voltage of 28 V.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5973551
Filename :
5973551
Link To Document :
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