DocumentCode
2598733
Title
Combined power oscillator using GaN HEMT
Author
Kim, Sungho ; Kim, Heonhwan ; Shin, Seung Heon ; Kim, Jung-Ho ; Kim, Bumki ; Choi, Jang-Young
Author_Institution
Kwangwoon University, Seoul, Republic of Korea
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
1
Abstract
Summary form only given, as follows. This paper proposes a new configuration for power oscillators based on the combined power amplifier. The focus is on power combining as a oscillator structure with a positive feedback loop line. The measured output power and conversion efficiency of the proposed oscillator are 46.8 dBm and 58 %, respectively, at 2.45 GHz with an applied drain bias voltage of 28 V.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5973551
Filename
5973551
Link To Document