Title :
A fully integrated 60 GHz transmitter front-end in SiGe BiCMOS technology
Author :
Glisic, Srdjan ; Schmalz, Klaus ; Herzel, Frank ; Wang, Rouyu ; Elkhouly, Mohamed ; Sun, Yaoming ; Scheytt, Johann Christoph
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A fully integrated transmitter (TX) front-end for wireless communication at 60 GHz, produced in 0.25 μm SiGe:C BiCMOS technology is presented. The transmitter features a modified heterodyne topology with a sliding intermediate frequency (IF). The TX features IF I/Q mixers, an IF amplifier, a 60 GHz mixer, a phase-locked loop, an image-rejection filter and a power amplifier. The measured 1-dB compression point at the output is 12.6 dBm and the saturated power is 16.2 dBm. Error-free data transmission with a 16QAM OFDM signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe without beamforming.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; carbon; field effect MIMIC; millimetre wave receivers; mixers (circuits); phase locked loops; power amplifiers; quadrature amplitude modulation; radio transmitters; wireless channels; BiCMOS technology; IF I/Q mixers; IF amplifier; QAM OFDM signal; SiGe:C; frequency 60 GHz; fully integrated transmitter front-end; heterodyne topology; intermediate frequency; phase locked loop; power amplifier; size 0.25 mum; wireless communication; Antenna measurements; Array signal processing; Mixers; OFDM; Phase locked loops; Silicon germanium; Transmitters; 60 GHz; SiGe; TX; multi-gigabit; single-chip;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719304
