DocumentCode :
2598769
Title :
A 73 to 83 GHz, 9-mW injection-locked oscillator in 65-nm CMOS technology
Author :
Li, Xia ; Baltus, Peter ; Van Zeijl, Paul ; Milosevic, Dusan ; Van Roermund, Arthur
Author_Institution :
Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear :
2011
fDate :
17-19 Jan. 2011
Firstpage :
5
Lastpage :
8
Abstract :
A 73 to 83 GHz injection-locked oscillator (IJLO) is realized in TSMC 65-nm CMOS technology. By using the frequency-sweeping method, a 10 GHz total locking range is achieved with -35 dBm injection power. The power consumption is 9 mW from a 1-V supply. Additional 4 mW and 6 mW are consumed for the input and output buffers respectively for the measurement purpose. The measured sensitivity of the IJLO is -60 dBm. The output power measured at the 50-Ohm load is higher than -10 dBm, and the simulated total settling time of the IJLO is less than 10 μs. The effective core area of the chip is 0.055 mm2.
Keywords :
CMOS integrated circuits; MIMIC; injection locked oscillators; low-power electronics; millimetre wave oscillators; CMOS technology; frequency 73 GHz to 83 GHz; frequency sweeping method; injection locked oscillator; power 9 mW; size 65 nm; voltage 1 V; CMOS integrated circuits; CMOS technology; Injection-locked oscillators; Power demand; Sensitivity; Tuning; 65-nm CMOS; Injection-locked oscillator; frequency-sweeping tuning; low power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
Type :
conf
DOI :
10.1109/SIRF.2011.5719305
Filename :
5719305
Link To Document :
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