Title :
Hybrid cascode with an isolated NLDMOS and HBT for X-Band power amplifier applications
Author :
Wipf, Christian ; Sorge, Roland ; Weger, Peter
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A cascode amplifier stage with an isolated NLDMOS and SiGe:C HBT was demonstrated. The main advantages of that circuitry concept are a reduced capacitive portion of the input impedance and a significantly increased power gain in comparison to a single NLDMOS amplifier stage. Additionally a more stable input impedance for different RF input power levels can be obtained. The stable and less capacitive input impedance simplifies the design of integrated impedance matching networks. In a first feasibility study a circuit with a NLDMOS gate width of 90 μm showed a maximum gain of 18 dB and a maximum output power of 10 dBm at 11 GHz. To the authors knowledge the circuit concept of a cascode amplifier containing a HBT and an isolated NLDMOS is presented for the first time.
Keywords :
Ge-Si alloys; MOSFET circuits; carbon; heterojunction bipolar transistors; impedance matching; microwave amplifiers; power amplifiers; RF input power levels; SiGe:C; X-band; cascode amplifier stage; frequency 11 GHz; gain 18 dB; heterojunction bipolar transistors; input impedance; integrated impedance matching networks; isolated NLDMOS amplifier stage; microwave amplifiers; power amplifier; power gain; size 90 nm; Current measurement; Gain; Heterojunction bipolar transistors; Logic gates; Power generation; Voltage measurement; Heterojunction bipolar transistors; LDMOS; Millimeter wave; Power amplifiers; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719310
