DocumentCode :
2599036
Title :
122 GHz transmitter using frequency doublers
Author :
Sarmah, Neelanjan ; Schmalz, Klaus ; Winkler, Wolfgang ; Scheytt, Christoph J. ; Glisic, Srdjan
Author_Institution :
IHP GmbH, Frankfurt (Oder), Germany
fYear :
2011
fDate :
17-19 Jan. 2011
Firstpage :
157
Lastpage :
160
Abstract :
In this work, a 122 GHz transmitter circuit using frequency doublers is realized in 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 250/315 GHz. Two versions of the frequency doubler based on the balanced topology with cascode transistor are implemented. In the basic version, the peak conversion gain was -9 dB with -6 dBm output power. In the improved version the peak conversion gain is improved to -6 dB with -3 dBm peak output power by using open stubs as second harmonic reflectors. A transmitter is realized by combining a VCO working from 59-62 GHz with the basic version of the doubler. The transmitter output power is from -3.5 to -5.5 dBm in the output frequency range of 118-122 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; field effect MIMIC; frequency multipliers; semiconductor materials; transmitters; voltage-controlled oscillators; BiCMOS technology; SiGe:C; VCO; balanced topology; cascode transistor; frequency 122 GHz; frequency doublers; second harmonic reflectors; size 0.13 mum; transmitter circuit; transmitter output power; Gain; Power generation; Silicon germanium; Topology; Transistors; Transmitters; Voltage-controlled oscillators; 122 GHz; SiGe technology; VCO; frequency doublers; millimeter-wave circuits; transmitter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
Type :
conf
DOI :
10.1109/SIRF.2011.5719319
Filename :
5719319
Link To Document :
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