122 GHz transmitter using frequency doublers

Author

Sarmah, Neelanjan ; Schmalz, Klaus ; Winkler, Wolfgang ; Scheytt, Christoph J. ; Glisic, Srdjan

Author_Institution

IHP GmbH, Frankfurt (Oder), Germany

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

157

Lastpage

160

Abstract

In this work, a 122 GHz transmitter circuit using frequency doublers is realized in 0.13 μm SiGe:C BiCMOS technology with f_T/f_max of 250/315 GHz. Two versions of the frequency doubler based on the balanced topology with cascode transistor are implemented. In the basic version, the peak conversion gain was -9 dB with -6 dBm output power. In the improved version the peak conversion gain is improved to -6 dB with -3 dBm peak output power by using open stubs as second harmonic reflectors. A transmitter is realized by combining a VCO working from 59-62 GHz with the basic version of the doubler. The transmitter output power is from -3.5 to -5.5 dBm in the output frequency range of 118-122 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; field effect MIMIC; frequency multipliers; semiconductor materials; transmitters; voltage-controlled oscillators; BiCMOS technology; SiGe:C; VCO; balanced topology; cascode transistor; frequency 122 GHz; frequency doublers; second harmonic reflectors; size 0.13 mum; transmitter circuit; transmitter output power; Gain; Power generation; Silicon germanium; Topology; Transistors; Transmitters; Voltage-controlled oscillators; 122 GHz; SiGe technology; VCO; frequency doublers; millimeter-wave circuits; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719319

Filename

5719319