A low-power 5-75-GHz common-gate subharmonic mixer in 65-nm CMOS

Author

Zhang, Fan ; Yang, Bo ; Skafidas, Efstratios

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

133

Lastpage

136

Abstract

Direct conversion architectures have the advantage of no image frequencies, fewer components and lower cost. However local oscillator (LO) leakage reduces receive sensitivity, causes LO pulling, and is a challenging problem for direct conversion transceiver design. A mixer using the 2nd-order harmonic of LO is thus desired to address this issue. The sub-harmonic mixer, proposed in this paper, is based on switching common-gate structure using 65-nm CMOS technology. With a current consumption of 2 mA at 1.5 V supply, the mixer achieves measured voltage conversion gain better than 3 dB for frequencies between 5 to 75 GHz. In the 57 to 66-GHz frequency band, the LO to RF port isolation is better than 38 dB and the noise figure is 14.8 dB when driven with a 30-GHz quadrature LO input.

Keywords

CMOS integrated circuits; MMIC mixers; MMIC oscillators; field effect MIMIC; field effect MMIC; low-power electronics; transceivers; CMOS technology; common-gate subharmonic mixer; current 2 mA; direct conversion transceiver; frequency 30 GHz; frequency 5 GHz to 75 GHz; frequency 57 GHz to 66 GHz; local oscillator; low-power electronics; noise figure 14.8 dB; quadrature LO input; size 65 nm; voltage 1.5 V; CMOS integrated circuits; Frequency measurement; Gain; Mixers; Noise; Radio frequency; Switches; 60-GHz; RF CMOS; common-gate mixer; down-conversion; millimeter wave; subharmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719328

Filename

5719328