DocumentCode :
2599229
Title :
Innovative 8-shaped inductors integrated in an advanced BiCMOS technology
Author :
Durand, C. ; Gianesello, F. ; Gloria, D.
Author_Institution :
Technol. R&D, Silicon Technol. Dev., STMicroelectron., Crolles, France
fYear :
2011
fDate :
17-19 Jan. 2011
Firstpage :
81
Lastpage :
84
Abstract :
As integrated inductors are a key component for RF circuits, these devices are mainly highlighted because of an imposing size and disturbing radiations. This article focuses on two innovative 8-shaped inductors presenting size reduction and low radiation capability. 8-shaped devices are compared to octagonal inductors by the way of measurements and simulations. 8-shaped inductors, even if presenting slightly lower electrical performances (lower size but lower quality factor), show interesting coupling reduction, with improvements from 7 to 20 dB depending of inductor design and orientation. Future works will consist of optimizing 2/3-turn 8-shaped layouts and test designs in circuit applications.
Keywords :
BiCMOS integrated circuits; inductors; radiofrequency integrated circuits; 8-shaped integrated inductor; RF circuit; disturbing radiation; gain 7 dB to 20 dB; low radiation capability; lower electrical performance; octagonal inductor; size reduction; BiCMOS integrated circuits; Couplings; Inductance; Inductors; Layout; Metals; Performance evaluation; 2×8-shaped inductor; 8-shaped inductor; BiCMOS technology; electro-magnetic coupling; inductive cross talk; integrated passives;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
Type :
conf
DOI :
10.1109/SIRF.2011.5719329
Filename :
5719329
Link To Document :
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