Title :
Integrated W-band RECTENNA (rectifying antenna) with Ge quantum dot Schottky Diode
Author :
Xu, Hongya ; Karmous, Alim ; Kasper, Erich
Author_Institution :
Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart, Germany
Abstract :
In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency limit 1.1THz was calculated from S-parameter measurements up to 110GHz. Both are integrated on HR-Si substrates forming a simple mm-wave power detection system. First RF measurement results of RECTENNA up to 110GHz are shown.
Keywords :
S-parameters; Schottky diodes; elemental semiconductors; germanium; microstrip antennas; quantum dots; rectennas; submillimetre wave antennas; submillimetre wave diodes; Ge; RF application; S-parameter measurements; Schottky barrier diode; Si; frequency 1.1 THz; integrated W-band RECTENNA; integrated silicon antenna; integrated single patch antenna; millimeter wave power detection system; quantum dot schottky diode; rectifying antenna; Antenna measurements; Current measurement; Quantum dots; Rectennas; Schottky diodes; Silicon; Antenna; Power Detector; Quantum Dot; RECTENNA; Schottky Diodes; Silicon Germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719330
