Integrated W-band RECTENNA (rectifying antenna) with Ge quantum dot Schottky Diode

Author

Xu, Hongya ; Karmous, Alim ; Kasper, Erich

Author_Institution

Inst. fur Halbleitertechnik, Univ. Stuttgart, Stuttgart, Germany

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

29

Lastpage

32

Abstract

In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency limit 1.1THz was calculated from S-parameter measurements up to 110GHz. Both are integrated on HR-Si substrates forming a simple mm-wave power detection system. First RF measurement results of RECTENNA up to 110GHz are shown.

Keywords

S-parameters; Schottky diodes; elemental semiconductors; germanium; microstrip antennas; quantum dots; rectennas; submillimetre wave antennas; submillimetre wave diodes; Ge; RF application; S-parameter measurements; Schottky barrier diode; Si; frequency 1.1 THz; integrated W-band RECTENNA; integrated silicon antenna; integrated single patch antenna; millimeter wave power detection system; quantum dot schottky diode; rectifying antenna; Antenna measurements; Current measurement; Quantum dots; Rectennas; Schottky diodes; Silicon; Antenna; Power Detector; Quantum Dot; RECTENNA; Schottky Diodes; Silicon Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719330

Filename

5719330