Title :
RF extraction of self-heating effects in FinFETs of various geometries
Author :
Makovejev, Sergej ; Olsen, Sarah ; Raskin, Jean-Pierre
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK
Abstract :
Dynamic self-heating effect is characterised in n-channel FinFETs on Silicon-on-Insulator (SOI) platform. RF extraction technique is discussed and dependence of thermal resistance on fin width, number of parallel fins and fin spacing is studied.
Keywords :
MOSFET; fin line components; fin lines; thermal resistance; FinFET; RF extraction; fin spacing; fin width; parallel fins; self-heating effects; thermal resistance; Capacitance; FinFETs; Heating; Logic gates; Radio frequency; Thermal resistance;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719331
