Life Predictions of Diffused Germanium Transistors by Means of Power Stress

Author

Gibson, W.C.

Author_Institution

BELL TELEPHONE LABORATORIES, MARION AND VINE STREETS, LAURELDALE, PENNSYLVANIA

fYear

1965

fDate

Nov. 1965

Firstpage

140

Lastpage

155

Keywords

Germanium; High definition video; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the

Conference_Location

Chicago, IL, USA

ISSN

0097-2088

Type

DOI

10.1109/IRPS.1965.362318

Filename

4207675

Link To Document