DocumentCode :
2599354
Title :
Life Predictions of Diffused Germanium Transistors by Means of Power Stress
Author :
Gibson, W.C.
Author_Institution :
BELL TELEPHONE LABORATORIES, MARION AND VINE STREETS, LAURELDALE, PENNSYLVANIA
fYear :
1965
fDate :
Nov. 1965
Firstpage :
140
Lastpage :
155
Keywords :
Germanium; High definition video; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1965.362318
Filename :
4207675
Link To Document :
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