Title :
Life Predictions of Diffused Germanium Transistors by Means of Power Stress
Author_Institution :
BELL TELEPHONE LABORATORIES, MARION AND VINE STREETS, LAURELDALE, PENNSYLVANIA
Keywords :
Germanium; High definition video; Stress;
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1965.362318