Title :
Single-event transients in LC-tank VCO
Author :
Gao, Yuanlin ; Lou, Jianing ; Zhang, Jun ; Li, Lei ; Xu, Feng
Author_Institution :
Res. Instn. of Electron. Sci. & Technol., UESTC, Chengdu, China
Abstract :
The responses of a LC-tank VCO to single-event transients (SET) are investigated. The phase noise at 1 MHz offset is -117 dBc/Hz at the carrier frequency of 1.56 GHz. The circuit-level simulation results indicate that ion strikes on critical transistors cause distortions in the oscillating output. A new radiation hardened by design (RHBD) method, adding a discharge path and a decoupling resistor to the bias circuit, is demonstrated to be an effective way to mitigate the effect of SET to the VCO.
Keywords :
radiation hardening (electronics); voltage-controlled oscillators; LC-tank VCO; bias circuit; carrier frequency; circuit-level simulation; critical transistors; decoupling resistor; discharge path; distortions; frequency 1.56 GHz; ion strikes; oscillating output; phase noise; radiation hardened by design method; single-event transients; LC-tank VCO; radiation hardened by design (RHBD); single-event transients (SET);
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4673-1893-8
DOI :
10.1109/MMWCST.2012.6238178
