• DocumentCode
    2599379
  • Title

    Analysis and design of low-power - low-noise crystal oscillators accounting for electro-mechanical energy conversion aspects

  • Author

    Wane, Sidina ; Gamand, Patrice

  • Author_Institution
    NXP-Semicond., Colombelles, France
  • fYear
    2011
  • fDate
    17-19 Jan. 2011
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    This paper presents an original multi-physics modeling methodology for the design and analysis of integrated crystal oscillators based on power-waves formulation. Conventional Barkhausen oscillation conditions criterion is derived in terms of reflection coefficients. Coupling module is introduced between the crystal resonator and the oscillator active-core in order to account for electromechanical energy conversion aspects. The proposed methodology is successfully applied to the design of low power and low noise integrated crystal oscillator in NXP-Semiconductors advanced BiCMOS technology. A phase noise better than -152dBc/Hz at 10KHz carrier offset with noise supply rejection better than -65dB are demonstrated.
  • Keywords
    crystal oscillators; integrated circuit design; integrated circuit noise; low-power electronics; Barkhausen oscillation; BiCMOS technology; NXP-Semiconductors; electro-mechanical energy conversion; frequency 10 kHz; integrated crystal oscillators; low-noise crystal oscillators; low-power crystal oscillators; multi-physics modeling methodology; phase noise; power-waves formulation; Couplings; Crystals; Impedance; Integrated circuit modeling; Noise; Oscillators; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-8060-9
  • Type

    conf

  • DOI
    10.1109/SIRF.2011.5719338
  • Filename
    5719338