DocumentCode :
2599379
Title :
Analysis and design of low-power - low-noise crystal oscillators accounting for electro-mechanical energy conversion aspects
Author :
Wane, Sidina ; Gamand, Patrice
Author_Institution :
NXP-Semicond., Colombelles, France
fYear :
2011
fDate :
17-19 Jan. 2011
Firstpage :
97
Lastpage :
100
Abstract :
This paper presents an original multi-physics modeling methodology for the design and analysis of integrated crystal oscillators based on power-waves formulation. Conventional Barkhausen oscillation conditions criterion is derived in terms of reflection coefficients. Coupling module is introduced between the crystal resonator and the oscillator active-core in order to account for electromechanical energy conversion aspects. The proposed methodology is successfully applied to the design of low power and low noise integrated crystal oscillator in NXP-Semiconductors advanced BiCMOS technology. A phase noise better than -152dBc/Hz at 10KHz carrier offset with noise supply rejection better than -65dB are demonstrated.
Keywords :
crystal oscillators; integrated circuit design; integrated circuit noise; low-power electronics; Barkhausen oscillation; BiCMOS technology; NXP-Semiconductors; electro-mechanical energy conversion; frequency 10 kHz; integrated crystal oscillators; low-noise crystal oscillators; low-power crystal oscillators; multi-physics modeling methodology; phase noise; power-waves formulation; Couplings; Crystals; Impedance; Integrated circuit modeling; Noise; Oscillators; Resonant frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
Type :
conf
DOI :
10.1109/SIRF.2011.5719338
Filename :
5719338
Link To Document :
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