Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations

Author

Guerra, Diego ; Marino, Fabio A. ; Akis, R. ; Ferry, David K. ; Goodnick, Stephen M. ; Saraniti, Marco

Author_Institution

Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

193

Lastpage

196

Abstract

We provide design guidelines for InGaAs HEMT nanoscale scaling from the analysis of results obtained through our full band Cellular Monte Carlo simulator. In particular, improved RF performance can be obtained preserving a minimum aspect ratio of 5, limiting in such way short channel effects and reducing the electron transit time through the reduction of the effective gate length. Further improvement can be obtained reducing the source-gate access region length. Thus, the effective gate length relative increase and the parasitic intrinsic access region resistance are found to be the main factors limiting nanoscale scaling in THz InGaAs HEMTs.

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; high electron mobility transistors; indium compounds; scaling circuits; HEMT nanoscale scaling; InGaAs; Monte Carlo device simulations; cellular Monte Carlo simulator; nanoscale HEMT; terahertz capability; Cutoff frequency; HEMTs; Indium gallium arsenide; Logic gates; Nanoscale devices; Performance evaluation; Radio frequency; Aspect ratio; InGaAs; Terahertz; effective gate length; nanoscale devices; nanoscale gate length;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719347

Filename

5719347