Title :
Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations
Author :
Guerra, Diego ; Marino, Fabio A. ; Akis, R. ; Ferry, David K. ; Goodnick, Stephen M. ; Saraniti, Marco
Author_Institution :
Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
We provide design guidelines for InGaAs HEMT nanoscale scaling from the analysis of results obtained through our full band Cellular Monte Carlo simulator. In particular, improved RF performance can be obtained preserving a minimum aspect ratio of 5, limiting in such way short channel effects and reducing the electron transit time through the reduction of the effective gate length. Further improvement can be obtained reducing the source-gate access region length. Thus, the effective gate length relative increase and the parasitic intrinsic access region resistance are found to be the main factors limiting nanoscale scaling in THz InGaAs HEMTs.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; high electron mobility transistors; indium compounds; scaling circuits; HEMT nanoscale scaling; InGaAs; Monte Carlo device simulations; cellular Monte Carlo simulator; nanoscale HEMT; terahertz capability; Cutoff frequency; HEMTs; Indium gallium arsenide; Logic gates; Nanoscale devices; Performance evaluation; Radio frequency; Aspect ratio; InGaAs; Terahertz; effective gate length; nanoscale devices; nanoscale gate length;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-8060-9
DOI :
10.1109/SIRF.2011.5719347
