• DocumentCode
    2599591
  • Title

    Surface Leakage of Dielectrics

  • Author

    Fedotowsky, L. ; Ho, P. ; Lehovec, K.

  • Author_Institution
    Research & Development Laboratories, Sprague Electric Company, North Adams, Massachusetts
  • fYear
    1965
  • fDate
    Nov. 1965
  • Firstpage
    345
  • Lastpage
    353
  • Abstract
    The surface leakage resistance, RS, of silicon oxide, and its bulk leakage resistance, Rb in humid ambients are determined from charging and discharging curves of MOS capacitors. Using these data we derive the extension of creep of surface charges from an electrode to which a d.c. voltage is applied. This creep which may induce breakdown phenomena in oxide-covered silicon microcircuits is retarded by reducing thickness and bulk resistance of the oxide.
  • Keywords
    Creep; Dielectrics; Electric breakdown; Electrodes; MOS capacitors; Silicon; Surface charging; Surface discharges; Surface resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
  • Conference_Location
    Chicago, IL, USA
  • ISSN
    0097-2088
  • Type

    conf

  • DOI
    10.1109/IRPS.1965.362330
  • Filename
    4207687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2599591