Surface Leakage of Dielectrics

The surface leakage resistance, RS, of silicon oxide, and its bulk leakage resistance, Rb in humid ambients are determined from charging and discharging curves of MOS capacitors. Using these data we derive the extension of creep of surface charges from an electrode to which a d.c. voltage is applied. This creep which may induce breakdown phenomena in oxide-covered silicon microcircuits is retarded by reducing thickness and bulk resistance of the oxide.