Silicon solutions for RF front-end applications

Author

Joseph, Alvin ; Gammel, Peter ; Rabbeni, Peter ; Wolf, Randy ; Dunn, Jim

Author_Institution

IBM Microelectron. Div., Essex Junction, Essex Junction, VT, USA

fYear

2011

fDate

17-19 Jan. 2011

Firstpage

109

Lastpage

112

Abstract

The 4^th generation wireless standard is ushering an era of ubiquitous connectivity. The convergence of data and voice to a portable media device is producing an explosive demand for high data rate communication. Such convergence requirements along with the need for improved battery life, smaller form factor, and reduced cost will demand new ways of system integration. The RF front-end-modules (FEM) that incorporates Power Amplifiers (PAs), Switches, power controller, and passives is one of the segment that is seeing major advancements. Silicon solutions are starting to penetrate into this GaAs stronghold. We discuss the potential for silicon-based technology in providing capability for FEM integration.

Keywords

4G mobile communication; CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; mobile radio; power amplifiers; power control; radiofrequency identification; semiconductor materials; switches; 4th generation wireless standard; FEM integration; RF front-end-module; SiGe; battery life improvement; data convergence; data rate communication; portable media device; power amplifier; power controller; switch; ubiquitous connectivity; BiCMOS integrated circuits; CMOS integrated circuits; Finite element methods; IEEE 802.11 Standards; Radio frequency; Silicon; Silicon germanium; Power Amplifier; SOI switch; SiGe HBT;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-8060-9

Type

conf

DOI

10.1109/SIRF.2011.5719348

Filename

5719348