Title :
Structural Defects and Junction Characteristics in Silicon Transistors
Author :
Jungbluth, E.D. ; Wang, P.
Author_Institution :
General Telephone and Electronics Laboratories, Inc., Bayside, New York
Keywords :
Atomic layer deposition; Capacitive sensors; Epitaxial layers; Impurities; Lattices; Silicon; Substrates; X-ray detection; X-ray detectors; X-ray diffraction;
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1965.362334
