DocumentCode :
2599673
Title :
Structural Defects and Junction Characteristics in Silicon Transistors
Author :
Jungbluth, E.D. ; Wang, P.
Author_Institution :
General Telephone and Electronics Laboratories, Inc., Bayside, New York
fYear :
1965
fDate :
Nov. 1965
Firstpage :
379
Lastpage :
389
Keywords :
Atomic layer deposition; Capacitive sensors; Epitaxial layers; Impurities; Lattices; Silicon; Substrates; X-ray detection; X-ray detectors; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1965. Fourth Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1965.362334
Filename :
4207691
Link To Document :
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