Optical study of porous p-type GaAs by spectroscopic ellipsometry

Author

Missaoui, A. ; Beji, L. ; Bouazizi, A.

Author_Institution

Lab. Phys. et Chim. des Interfaces, Fac. des Sci. de Monastir, Tunis

fYear

2008

fDate

11-13 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

Porous GaAs were prepared by electrochemical etching of p-type GaAs and investigated by Spectroscopic Ellipsometry (SE). The ellipsometry is an optical technique devoted to the analysis of surfaces. The objective of this study is to determine the porosity, refractive index and the thickness. A standard Scanning Electron Microscope (SEM) technique is used to characterise the surface morphology and to confirm this study by ellipsometry.

Keywords

III-V semiconductors; electrochemistry; etching; gallium arsenide; porosity; porous semiconductors; refractive index; scanning electron microscopy; surface morphology; GaAs; SEM; electrochemical etching; porosity; porous p-type semiconductor; refractive index; scanning electron microscopy; spectroscopic ellipsometry; surface morphology; Electron optics; Ellipsometry; Etching; Gallium arsenide; Optical refraction; Optical variables control; Refractive index; Scanning electron microscopy; Spectroscopy; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Mediterranean Winter, 2008. ICTON-MW 2008. 2nd ICTON

Conference_Location

Marrakech

Print_ISBN

978-1-4244-3484-8

Electronic_ISBN

978-1-4244-3485-5

Type

conf

DOI

10.1109/ICTONMW.2008.4773114

Filename

4773114