Title :
Optical study of porous p-type GaAs by spectroscopic ellipsometry
Author :
Missaoui, A. ; Beji, L. ; Bouazizi, A.
Author_Institution :
Lab. Phys. et Chim. des Interfaces, Fac. des Sci. de Monastir, Tunis
Abstract :
Porous GaAs were prepared by electrochemical etching of p-type GaAs and investigated by Spectroscopic Ellipsometry (SE). The ellipsometry is an optical technique devoted to the analysis of surfaces. The objective of this study is to determine the porosity, refractive index and the thickness. A standard Scanning Electron Microscope (SEM) technique is used to characterise the surface morphology and to confirm this study by ellipsometry.
Keywords :
III-V semiconductors; electrochemistry; etching; gallium arsenide; porosity; porous semiconductors; refractive index; scanning electron microscopy; surface morphology; GaAs; SEM; electrochemical etching; porosity; porous p-type semiconductor; refractive index; scanning electron microscopy; spectroscopic ellipsometry; surface morphology; Electron optics; Ellipsometry; Etching; Gallium arsenide; Optical refraction; Optical variables control; Refractive index; Scanning electron microscopy; Spectroscopy; Surface morphology;
Conference_Titel :
Mediterranean Winter, 2008. ICTON-MW 2008. 2nd ICTON
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-3484-8
Electronic_ISBN :
978-1-4244-3485-5
DOI :
10.1109/ICTONMW.2008.4773114
