Title :
An AlGaN/GaN HEMT-based monolithic integrated X-band low noise amplifier
Author :
Lei, Pang ; Xiaojuan, Chen ; Xinyu, Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
Noise performance of AlGaN/GaN HEMT has received more and more worldwide attention in recent years. In this paper, a MMIC process in AlGaN/GaN technology has been developed. A LNA design is based on a AlGaN/GaN HEMT noise model and a complete model library of passive elements under the optimum bias for LNA design. The paper describes modeling, bias dependence of small-signal and noise parameters, circuit design of the LNA using noise model without transistor noise measurement, and demonstrates a NF of 2 dB at 8GHz.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; low noise amplifiers; microwave amplifiers; AlGaN-GaN; HEMT noise model; HEMT-based monolithic integrated X-band low noise amplifier; LNA design; MMIC process; circuit design; noise parameter; noise performance; passive element; Aluminum gallium nitride; Gallium nitride; HEMTs; Integrated circuit modeling; MMICs; Noise; Noise measurement; AlGaN/GaN HEMT; LNA; MMIC;
Conference_Titel :
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2012 International Workshop on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4673-1893-8
DOI :
10.1109/MMWCST.2012.6238209
