• DocumentCode
    2600032
  • Title

    Improved modulation bandwidth of strained quantum well lasers by coupled with n-type δ-doped layer

  • Author

    Buchinsky, O. ; Blumin, W. ; Sarfaty, R. ; Fekete, D. ; Orenstein, M.

  • Author_Institution
    Dept. of Phys. & Solid State Inst., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    2
  • fYear
    1996
  • fDate
    18-21 Nov 1996
  • Firstpage
    384
  • Abstract
    Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type δ-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of δ-doping with the squared potential of a finite strained InxGa1-xAs/GaAs QW
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical couplers; optical modulation; quantum well lasers; semiconductor doping; δ-doping; InxGa1-xAs/GaAs; InGaAs-GaAs; active layer; capture enhancement; dynamic properties; modulation bandwidth; n-type δ-doped layer; potential profile; squared potential; strained quantum well lasers; strained single quantum well laser; Bandwidth; Delta modulation; Doping; Electrons; Energy states; Gallium arsenide; Laser theory; Optical coupling; Quantum well lasers; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-3160-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1996.571950
  • Filename
    571950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2600032