Title :
Improved modulation bandwidth of strained quantum well lasers by coupled with n-type δ-doped layer
Author :
Buchinsky, O. ; Blumin, W. ; Sarfaty, R. ; Fekete, D. ; Orenstein, M.
Author_Institution :
Dept. of Phys. & Solid State Inst., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Improved dynamic properties of strained single quantum well (QW) laser are obtained by adding an n-type δ-doping to the active layer. The increased modulation bandwidth is attributed to the enhancement of capture in the QW. The design was performed by calculating the overall potential profile, by combining the analytical solution of δ-doping with the squared potential of a finite strained InxGa1-xAs/GaAs QW
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical couplers; optical modulation; quantum well lasers; semiconductor doping; δ-doping; InxGa1-xAs/GaAs; InGaAs-GaAs; active layer; capture enhancement; dynamic properties; modulation bandwidth; n-type δ-doped layer; potential profile; squared potential; strained quantum well lasers; strained single quantum well laser; Bandwidth; Delta modulation; Doping; Electrons; Energy states; Gallium arsenide; Laser theory; Optical coupling; Quantum well lasers; Resonance;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571950
