Title :
The effects of strain and crystallographic orientation on nonlinearities in quantum well devices
Author :
Smirl, Arthur L. ; Towe, Elias
Author_Institution :
Lab. for Photonics & Quantum Electron., Iowa Univ., Iowa City, IA, USA
Abstract :
The author discusses their progress in investigating the influences of crystallographic orientation and of strain on the nonlinear and electro-optical properties of III-V semiconductor compounds, and they present examples of how these orientation-dependent properties can be used to design novel optical devices
Keywords :
III-V semiconductors; crystal orientation; electro-optical devices; epitaxial growth; molecular beam epitaxial growth; optical fabrication; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; III-V semiconductor compounds; crystallographic orientation; electro-optical properties; nonlinear optical properties; nonlinearities; optical devices; orientation-dependent properties; quantum well devices; strain effect; Anisotropic magnetoresistance; Capacitive sensors; Crystallography; Geometrical optics; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical modulation; Optical polarization; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571951
