Title :
Optical properties and nonlinear effects in strain engineered semiconductor heterostructures
Author :
Dutta, M. ; Shen, H.
Author_Institution :
Phys. Sci. Directorate, US Army Res. Lab., Adelphi, MD, USA
Abstract :
Discusses several novel kinds of strained structures: 1) anisotropically strained quantum well structures; 2) variable strain quantum well structures; 3) delta strained quantum well structures, concentrating mainly on the first one. These novel structures exhibit new electronic and optical properties not seen in the conventional strained materials; thus they offer new functionalities
Keywords :
electro-optical devices; electro-optical effects; nonlinear optics; photoluminescence; semiconductor heterojunctions; semiconductor quantum wells; anisotropically strained quantum well structures; delta strained quantum well structures; electronic properties; functionalities; nonlinear effects; optical properties; strain engineered semiconductor heterostructures; strained materials; strained structures; variable strain quantum well structure; Anisotropic magnetoresistance; Capacitive sensors; Geometrical optics; Nonlinear optics; Optical films; Optical mixing; Optical polarization; Optical scattering; Strain measurement; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571952
