Title :
Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW
Author :
Mottahedeh, R. ; Haywood, S.K. ; Pattison, D.A. ; Kean, P.N. ; Bennion, I. ; Hopkinson, M. ; Prescott, D. ; Pate, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
Abstract :
Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 Å In0.44Ga0.56As/103 Å InAs0.2P0.8 in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively
Keywords :
III-V semiconductors; X-ray diffraction; excitons; gallium arsenide; indium compounds; k.p calculations; molecular beam epitaxial growth; optical saturable absorption; semiconductor heterojunctions; semiconductor quantum wells; 298 K; In0.44Ga0.56As-InAs0.2P0.8 ; InAsP; InAsP barrier; InGaAs; InGaAs well; InGaAs/InAsP MQW; X-ray diffraction; barriers heights; compressive strain; electron subbands; excitonic absorption saturation; heavy hole subbands; k.p model; light hole subbands; linear absorption; nonlinear absorption; pin diode configuration; solid source MBE; tensile strain; Absorption; Charge carrier lifetime; Diodes; Effective mass; Electrons; Indium gallium arsenide; Quantum well devices; Spontaneous emission; Thermionic emission; Tunneling;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571954
