A Fully Integrated 5GHz Balanced SiGe HBT Power Amplifier Design

Author

Lei, Chen ; Ying, Ruan ; Zong-Sheng, Lai

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

Volume

2

fYear

2010

fDate

24-25 April 2010

Firstpage

486

Lastpage

489

Abstract

A 5GHz balanced fully integrated Power Amplifier (PA) on a single chip has been designed in a 0.18 μm SiGe BiCMOS technology. An analysis show that the process featured by 60GHz characteristic frequency can largely improve power output performance, and the differential topology optimized linearity, power added efficiency (PAE) and large signal performance. At 5.5GHz frequency, with 3.3V voltage supply, the 3-stage PA exhibits an output ldB compression point (OPldB) of 18dBm, max output power of 22dBm and a PAE of 23% at OdBm input. The results show that the PA well meets the 802.11a Wireless Local Area Network (WLAN) standards. Overall chip area is 0.9×2.2 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; heterojunction bipolar transistors; semiconductor materials; wireless LAN; 802.11a wireless local area network standards; BiCMOS technology; SiGe; differential topology optimized linearity; frequency 5 GHz; frequency 5.5 GHz; frequency 60 GHz; fully-integrated balanced HBT power amplifier design; power added efficiency; size 0.18 mum; voltage 3.3 V; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Power amplifiers; Signal analysis; Silicon germanium; Topology; Wireless LAN; PAE; balance; linearity; power amplifier (PA);

fLanguage

English

Publisher

ieee

Conference_Titel

Networks Security Wireless Communications and Trusted Computing (NSWCTC), 2010 Second International Conference on

Conference_Location

Wuhan, Hubei

Print_ISBN

978-0-7695-4011-5

Electronic_ISBN

978-1-4244-6598-9

Type

conf

DOI

10.1109/NSWCTC.2010.255

Filename

5480928