Correlation of Electrical, Microstructural, and Chemical Properties of Heat-Treated Platinum-Silicon Contract Devices

It has been shown that planar transistors with good electrical properties can be prepared with platinum contacts heat treated from 550° to 700°C. Anomalous results were traced by microstructural, x-ray diffraction, and electron beam microprobe analyses to incomplete silicon dioxide removal or silicon reoxidation in the contact areas prior to platinum metallization.