• DocumentCode
    2600732
  • Title

    Creation of Interface States by Avalanche Effect

  • Author

    Nicollian, E.H. ; Goetzberger, A.

  • Author_Institution
    Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey
  • fYear
    1967
  • fDate
    Nov. 1967
  • Firstpage
    66
  • Lastpage
    67
  • Abstract
    Charge and interface states are introduced into the oxide in an MOS capacitor by producing avalanche break-down at the semiconductor surface. Both the charge trapped in the oxide and the interface states can be annealed out at low temperatures.
  • Keywords
    Avalanche breakdown; Breakdown voltage; Capacitance-voltage characteristics; Density measurement; Interface states; Laboratories; MOS capacitors; Silicon; Surface treatment; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1967. Sixth Annual
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1967.362395
  • Filename
    4207758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2600732