• DocumentCode
    2600791
  • Title

    Silicon Nitride Passivated Integrated Circuits - Reliability Improvements

  • Author

    Trapp, O.D. ; Preece, J.B.

  • Author_Institution
    Westinghouse Electric Corporation, Molecular Electronics Division, Elkridge, Maryland
  • fYear
    1967
  • fDate
    Nov. 1967
  • Firstpage
    96
  • Lastpage
    105
  • Abstract
    Silicon nitride passivated integrated circuits have been shown to exhibit exceptional stability to inversion after reverse bias accelerated stressing up to 1000 hours at 175°C. Various oxide-nitride structures compatible with large scale manufacturing were investigated. Stress data is presented as a function of the process used, and it is shown that the limiting factor to device stability is the cleanliness of the SiO2 interlayer.
  • Keywords
    Acceleration; Chemical technology; Circuit stability; Etching; Integrated circuit reliability; Integrated circuit technology; Laboratories; Silicon compounds; Solid state circuits; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1967. Sixth Annual
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1967.362399
  • Filename
    4207762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2600791