Title :
Silicon Nitride Passivated Integrated Circuits - Reliability Improvements
Author :
Trapp, O.D. ; Preece, J.B.
Author_Institution :
Westinghouse Electric Corporation, Molecular Electronics Division, Elkridge, Maryland
Abstract :
Silicon nitride passivated integrated circuits have been shown to exhibit exceptional stability to inversion after reverse bias accelerated stressing up to 1000 hours at 175°C. Various oxide-nitride structures compatible with large scale manufacturing were investigated. Stress data is presented as a function of the process used, and it is shown that the limiting factor to device stability is the cleanliness of the SiO2 interlayer.
Keywords :
Acceleration; Chemical technology; Circuit stability; Etching; Integrated circuit reliability; Integrated circuit technology; Laboratories; Silicon compounds; Solid state circuits; Stress;
Conference_Titel :
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/IRPS.1967.362399
