DocumentCode :
2600838
Title :
Thermophysics of Reliability Screening
Author :
Plumlee, H.R. ; Peterman, D.A.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
fYear :
1967
fDate :
Nov. 1967
Firstpage :
108
Lastpage :
113
Abstract :
The thermal behavior of a transistor is very important to its reliability. However, this behavior is complicated by the nonuniformity of the operating temperature and its dependence on operating conditions. An understanding of this behavior is necessary to accurately interpret reliability data and to establish more effective reliability screening procedures. The measurement of thermal impedance or thermal operating stress of a transistor is also complicated by the junction temperature nonuniformity and dependence upon operating conditions. Great care must be taken in using electrical methods to measure thermal impedance since it is not easy to determine what the indicated value represents. Because of the interdependence of most parameters used for reliability measurements and testing, it appears necessary to use a multi-parameter analysis on reliability data to obtain effective screening. This analysis should determine not only maximum value limites of each parameer but also limits relative to the values of other parameters. Reliable operation would correspond to regions in multiparameter space which are not necessarily bounded by a specific value of each parameter.
Keywords :
Electric variables measurement; Failure analysis; Impedance measurement; Instruments; Power dissipation; Temperature dependence; Temperature measurement; Testing; Thermal stresses; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location :
Los Angeles, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1967.362401
Filename :
4207764
Link To Document :
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