Exposing and Analyzing P-N Junction Defects

Exeriments have shown that some localized P-N Junction defects can be located and exposed for analysis by making a metallurgical cross section of the junction while its abnormal reverse current-voltage characteristic is being monitored on a curve tracer. The gradual improvement of the anomalous characteristic indicates that the cross section surface is passing through the defect region. Analysis of the exposed defect may then yield defect size, current densities, carrier generation rates and other information.