Failure Analysis using a Scanning Electron Microscope

The advantages of using the scanning electron microscope (SEM) in the study of failure modes and/or general component quality is discussed. Examples are given of studies performed on various components which, because of their irregular shape or small size, posed significant and sometimes insurmountable difficulties to their examination using conventional microphotographic techniques. Illustrations are given of the application of the SEM to the study of various anomalies in semiconductors and wire platings. Specifically, these include such semiconductor problems as opens in the metallization over steps in the silicon dioxide, cracks in bonds and silicon chips, etc. Where practical, illustrations of photographs taken with the SEM are compared with those taken using conventional photomicroscopy.