DocumentCode
2601264
Title
A Review of Instability Mechanisms in Passivation Films
Author
Kerr, D.R.
Author_Institution
IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York 12533
fYear
1970
fDate
25659
Firstpage
1
Lastpage
8
Abstract
Over the past ten years a number of single and double-layer insulator structures have been studied for passivation of semiconductor device surfaces. This paper reviews the various charge instability mechanisms associated with these structures. These include ionic drift, polarization, slow electronic trapping, and double-layer effects. The known dependence of these effects on processing and material parameters is discussed and the current state-of-the-art for controlling these instabilities is reviewed.
Keywords
Capacitance-voltage characteristics; Dielectrics and electrical insulation; Electron traps; Metal-insulator structures; Passivation; Polarization; Semiconductor device reliability; Semiconductor films; Surface contamination; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1970.362425
Filename
4207791
Link To Document