• DocumentCode
    2601264
  • Title

    A Review of Instability Mechanisms in Passivation Films

  • Author

    Kerr, D.R.

  • Author_Institution
    IBM Components Division, East Fishkill Laboratory, Hopewell Junction, New York 12533
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Over the past ten years a number of single and double-layer insulator structures have been studied for passivation of semiconductor device surfaces. This paper reviews the various charge instability mechanisms associated with these structures. These include ionic drift, polarization, slow electronic trapping, and double-layer effects. The known dependence of these effects on processing and material parameters is discussed and the current state-of-the-art for controlling these instabilities is reviewed.
  • Keywords
    Capacitance-voltage characteristics; Dielectrics and electrical insulation; Electron traps; Metal-insulator structures; Passivation; Polarization; Semiconductor device reliability; Semiconductor films; Surface contamination; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362425
  • Filename
    4207791