DocumentCode :
2601270
Title :
The Effects of Insulator Surface-Ion Migration on MOS and Bipolar Integrated Circuits
Author :
Schlegel, E.S. ; Keen, R.S. ; Schnable, G.L.
Author_Institution :
Philco-Ford Corporation, Microelectronics Division, Blue Bell, Pennsylvania 19422
fYear :
1970
fDate :
25659
Firstpage :
9
Lastpage :
16
Abstract :
The effects of mobile ions at insulator surfaces on integrated circuits are reviewed. The published literature is reviewed and recent experimental results are presented. Recent data are given on inversion voltages and surface recombination velocities both in regions under aluminum metal and in regions not covered by metal. Other data include measurements of surface conductivity on different types of surfaces, and a demonstration of the existence of mobile ions at an interface between two insulator layers. Techniques are described for minimizing surface-ion effects on integrated circuits.
Keywords :
Bipolar integrated circuits; Capacitance; Conductivity measurement; Current measurement; Dielectric devices; Insulation; P-n junctions; Silicon; Surface charging; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1970.362426
Filename :
4207792
Link To Document :
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