• DocumentCode
    2601306
  • Title

    Conduction in Films of Pyrolytic Al2O3

  • Author

    Walden, R.H. ; Strain, R.J.

  • Author_Institution
    Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey 07974
  • fYear
    1970
  • fDate
    25659
  • Firstpage
    23
  • Lastpage
    28
  • Abstract
    To assess its role in the stable A12O3/SiO2 IGFET´s, the conduction properties of pyrolytic A12O3 on silicon have been studied using a combined I-V, C-V 6 technique. Above 2×106 V/cm, barrier limited current is a serious reliability factor, but the polarization current found at low fields should not cause failures.
  • Keywords
    Aluminum oxide; Capacitance; Conductive films; Current measurement; Electron traps; Insulation; Optical polarization; Semiconductor films; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1970. 8th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1970.362428
  • Filename
    4207794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2601306