Title :
Conduction in Films of Pyrolytic Al2O3
Author :
Walden, R.H. ; Strain, R.J.
Author_Institution :
Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey 07974
Abstract :
To assess its role in the stable A12O3/SiO2 IGFET´s, the conduction properties of pyrolytic A12O3 on silicon have been studied using a combined I-V, C-V 6 technique. Above 2×106 V/cm, barrier limited current is a serious reliability factor, but the polarization current found at low fields should not cause failures.
Keywords :
Aluminum oxide; Capacitance; Conductive films; Current measurement; Electron traps; Insulation; Optical polarization; Semiconductor films; Silicon; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1970.362428
