Title :
Degradation of GaAs and Ga1-xAlxAs Light Emitting Diodes
Author :
Blum, J.M. ; Konnerth, K.L. ; Marinace, J.C. ; Woodall, J.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Abstract :
Life test data on the degradation characteristics of GaAs and GaAlAs light emitting diodes are presented. The GaAs data show the effects of diode processing and impurity concentration on degradation. The AlGaAs diodes prepared during the early stages of their development were tested at various current densities and aged up to 14,000 hours.
Keywords :
Aging; Degradation; Diffusion processes; Doping; Gallium arsenide; Impurities; Life testing; Light emitting diodes; Silicon; Tin;
Conference_Titel :
Reliability Physics Symposium, 1970. 8th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1970.362435
